Semiconductor device

ABSTRACT

An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device, in particular,a semiconductor device in which damages of an element such as atransistor provided in the semiconductor device are reduced even when astress is applied.

2. Description of the Related Art

In recent years, a technique for providing an integrated circuitincluding a transistor or the like over a flexible substrate such as aplastic substrate has attracted attention (for example, Patent Document1: Japanese Published Patent Application No. 2003-204049). Asemiconductor device formed by providing an integrated circuit over aflexible substrate can be reduced in weight, cost, or the like ascompared to the case of using a substrate such as a semiconductorsubstrate or a glass substrate. Since a flexible semiconductor devicecan be bent for example, it is expected to be applied to various fieldsand places (For example, Patent Document 2: Japanese Published PatentApplication No. 2006-232449).

SUMMARY OF THE INVENTION

However, when force such as bending is externally applied to asemiconductor device including an integrated circuit provided with anelement such as a transistor over a flexible substrate, stress caused inthe semiconductor device might damage the element such as a transistorwhich is included in the semiconductor device and adversely affectcharacteristics of the element. Further, in the manufacturing process ofthe semiconductor device, the element such as a transistor is stressedand therefore the element might be damaged, which results in reducingthe yield of products.

In view of the above problems, an object of the present invention is toprovide a semiconductor device in which damages of an element such as atransistor are reduced even when force such as bending is externallyapplied to generate stress in the semiconductor device.

In the semiconductor device of the present invention, a film functioningas a protective film is provided in order to prevent the element such asa transistor from being damaged due to stress caused in thesemiconductor device even when the semiconductor device is stressed bybeing applied with physical force such as bending in the manufacturingprocess of the semiconductor device or utilization after completionthereof. The protective film is provided so as to be bent between theelements such as transistors (so that stress is concentratedtherebetween) when the semiconductor device is applied with physicalforce such as bending. Specifically, by providing the protective filmover and under the element such as a transistor and in the vicinitythereof, concentration of stress on the element such as a transistor issuppressed.

Since a feature of the semiconductor device of the present invention isthat the protective film is provided over and under a semiconductor filmincluded in a transistor and in the vicinity thereof, the protectivefilm may be provided so as to cover an end portion of the semiconductorfilm. The protective film may be provided so as to be in contact withthe semiconductor film or so as not to be in contact with thesemiconductor film with an insulating film interposed therebetween.Hereinafter, a specific structure of the semiconductor device of thepresent invention is described.

One semiconductor device of the present invention includes asemiconductor film including a channel formation region and an impurityregion, which is provided over a substrate, a first conductive filmprovided over the channel formation region with a gate insulating filminterposed therebetween, a first interlayer insulating film provided tocover the first conductive film, a second conductive film provided overthe first interlayer insulating film so as to overlap with at least partof the impurity region, a second interlayer insulating film providedover the second conductive film, and a third conductive film providedover the second interlayer insulating film, in which the thirdconductive film is electrically connected to the impurity region throughan opening formed in the first interlayer insulating film and the secondinterlayer insulating film. Note that the word “overlap” in thisspecification refers to overlap when seen from a direction perpendicularto a surface of the substrate, and the second conductive film providedso as to overlap with part of the impurity region means that the secondconductive film provided overlaps with part of the impurity region whenseen from the direction perpendicular to the surface of the substrate.

Another semiconductor device of the present invention includes asemiconductor film including a channel formation region and an impurityregion, which is provided over a substrate, a first conductive filmprovided over the channel formation region with a gate insulating filminterposed therebetween, a first interlayer insulating film provided tocover the first conductive film, a second conductive film provided overthe first interlayer insulating film so as to overlap with at least partof the impurity region, a second interlayer insulating film providedover the second conductive film, and a third conductive film providedover the second interlayer insulating film, in which the thirdconductive film is electrically connected to the impurity region throughan opening formed in the first interlayer insulating film, the secondinterlayer insulating film, and the second conductive film.

Another semiconductor device of the present invention includes asemiconductor film including a channel formation region and an impurityregion, which is provided over a substrate, a first conductive filmprovided over the channel formation region with a gate insulating filminterposed therebetween, a first interlayer insulating film provided tocover the first conductive film, a second conductive film provided overthe first interlayer insulating film so as to overlap with at least partof the impurity region, a second interlayer insulating film providedover the second conductive film, and a third conductive film providedover the second interlayer insulating film, in which the secondconductive film is electrically connected to the impurity region throughan opening formed in the first interlayer insulating film, and the thirdconductive film is electrically connected to the second conductive filmthrough an opening formed in the second interlayer insulating film.

Another semiconductor device of the present invention includes asemiconductor film including a channel formation region, a firstimpurity region, and a second impurity region, which is provided over asubstrate, a first conductive film provided over the channel formationregion with a gate insulating film interposed therebetween, a secondconductive film provided over the first impurity region so as to be incontact with the gate insulating film, an interlayer insulating filmprovided to cover the first conductive film and the second conductivefilm, and a third conductive film provided over the interlayerinsulating film, in which the first conductive film and the secondconductive film are formed of the same material, and the thirdconductive film is electrically connected to the first impurity regionthrough an opening formed in the interlayer insulating film.

Another semiconductor device of the present invention includes asemiconductor film including a channel formation region, a firstimpurity region, and a second impurity region, which is provided over asubstrate, a first conductive film provided over the channel formationregion with a gate insulating film interposed therebetween, a secondconductive film provided over the first impurity region so as to be incontact with the gate insulating film, an interlayer insulating filmprovided to cover the first conductive film and the second conductivefilm, and a third conductive film provided over the interlayerinsulating film, in which the first conductive film and the secondconductive film are formed of the same material, and the thirdconductive film is electrically connected to the first impurity regionthrough an opening formed in the interlayer insulating film and thesecond conductive film.

Another semiconductor device of the present invention includes asemiconductor film including a channel formation region, a firstimpurity region, and a second impurity region, which is provided over asubstrate, a first conductive film provided over the channel formationregion with a gate insulating film interposed therebetween, a secondconductive film provided so as to cover an end portion of the firstimpurity region and in contact with the first impurity region, aninterlayer insulating film provided to cover the first conductive filmand the second conductive film, and a third conductive film providedover the interlayer insulating film, in which the first conductive filmand the second conductive film are formed of the same material, and thethird conductive film is electrically connected to the second conductivefilm through an opening formed in the interlayer insulating film.

Another semiconductor device of the present invention includes anisland-shaped protective film provided over a substrate, a semiconductorfilm including a channel formation region and an impurity region, whichis provided over the protective film with an insulating film interposedtherebetween, a first conductive film provided over the channelformation region with a gate insulating film interposed therebetween, afirst interlayer insulating film provided to cover the first conductivefilm, a second conductive film provided over the first interlayerinsulating film so as to overlap with at least part of the impurityregion, a second interlayer insulating film provided over the secondconductive film, and a third conductive film provided over the secondinterlayer insulating film, in which the third conductive film iselectrically connected to the impurity region through an opening formedin the first interlayer insulating film, the second interlayerinsulating film, and the second conductive film.

Another semiconductor device of the present invention includes anisland-shaped protective film provided over a substrate, a semiconductorfilm including a channel formation region and an impurity region, whichis provided so as to partially overlap with the protective film with aninsulating film interposed therebetween, a first conductive filmprovided over the channel formation region with a gate insulating filminterposed therebetween, a first interlayer insulating film provided tocover the first conductive film, a second conductive film provided overthe first interlayer insulating film so as to overlap with at least partof the impurity region, a second interlayer insulating film providedover the second conductive film, and a third conductive film providedover the second interlayer insulating film, in which the whole channelformation region and the protective film overlap with each other, andthe third conductive film is electrically connected to the impurityregion through an opening formed in the first interlayer insulatingfilm, the second interlayer insulating film, and the second conductivefilm.

Another semiconductor device of the present invention includes aprotective film provided over a substrate, an insulating film providedover the protective film, a semiconductor film including a channelformation region and an impurity region, which is provided over theinsulating film, a first conductive film provided over the channelformation region with a gate insulating film interposed therebetween, aninterlayer insulating film provided to cover the first conductive film,and a second conductive film provided over the interlayer insulatingfilm, in which the protective film is provided so as to surround thesemiconductor film, and the second conductive film is electricallyconnected to the impurity region through an opening formed in theinterlayer insulating film.

Another semiconductor device of the present invention includes asemiconductor film including a channel formation region and an impurityregion, which is provided over a substrate, a first conductive filmprovided over the channel formation region with a gate insulating filminterposed therebetween, a first interlayer insulating film provided tocover the first conductive film, a second conductive film provided overthe first interlayer insulating film so as to overlap with at least partof the impurity region, a second interlayer insulating film providedover the second conductive film, a third conductive film provided overthe second interlayer insulating film, a third interlayer insulatingfilm provided to cover the third conductive film, and an island-shapedprotective film provided over the third interlayer insulating film, inwhich the third conductive film is electrically connected to theimpurity region through an opening formed in the first interlayerinsulating film, the second interlayer insulating film, and the secondconductive film, and the semiconductor film and the protective filmoverlap with each other.

Even when the semiconductor device is stressed in the manufacturingprocess of the semiconductor device or utilization after completionthereof, damages of the element can be prevented, and therefore theyield and reliability of the semiconductor device can be improved byproviding the protective film over and under the element such as atransistor included in the semiconductor device and in the vicinitythereof.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 2A to 2C are views showing examples of a semiconductor device ofthe present invention.

FIGS. 3A and 3B are views each showing an example of a semiconductordevice of the present invention.

FIGS. 4A to 4E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 5A to 5D are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 6A to 6E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 7A and 7B are views each showing an example of a semiconductordevice of the present invention.

FIGS. 8A to 8E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 9A and 9B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 10A to 10C are views showing examples of a semiconductor device ofthe present invention.

FIG. 11 is a view showing an example of a semiconductor device of thepresent invention.

FIGS. 12A to 12E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 13A and 13B are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 14A to 14E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 15A to 15E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 16A and 16B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 17A to 17E are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 18A to 18C are views showing an example of a method formanufacturing a semiconductor device of the present invention.

FIGS. 19A and 19B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 20A and 20B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 21A and 21B are views each showing an example of a semiconductordevice of the present invention.

FIGS. 22A and 22B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 23A and 23B are views each showing an example of a semiconductordevice of the present invention.

FIGS. 24A to 24C are views showing examples of a semiconductor device ofthe present invention.

FIGS. 25A and 25B are views showing an example of a semiconductor deviceof the present invention.

FIGS. 26A to 26C are views showing examples of an application mode of asemiconductor device of the present invention.

FIGS. 27A to 27H are views each showing an example of an applicationmode of a semiconductor device of the present invention.

FIGS. 28A to 28F are views each showing an example of an applicationmode of a semiconductor device of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Although the invention will be fully described by way of embodimentmodes with reference to the accompanying drawings, it is to beunderstood by those skilled in the art that various changes andmodifications can be made without departing from the spirit and scope ofthe invention. Therefore, the present invention should not be construedas being limited to the description in the following embodiment modes.Note that in the structure of the present invention described below,common portions are denoted by the same reference numerals in alldiagrams, in some cases.

Embodiment Mode 1

In this embodiment mode, an example of the semiconductor device of thepresent invention is described with reference to drawings.

The semiconductor device of the present invention has a structure forpreventing an element provided in the semiconductor device, such as atransistor, from being damaged even in the case where the semiconductordevice is stressed by being applied with force such as bending. In thisembodiment mode, as an example of the structure, the case is describedin which a film functioning as a protective film is provided above asemiconductor film included in the transistor.

FIGS. 1A and 1B show an example of the semiconductor device described inthis embodiment mode. Note that FIG. 1A shows a top plan view and FIG.1B shows a cross-sectional view taken along a line A-B in FIG. 1A.

The semiconductor device shown in FIGS. 1A and 1B includes thin filmtransistors 100 a and 100 b each including at least a semiconductor film106, a gate insulating film 108, and a first conductive film 110functioning as a gate electrode, and second conductive films 114functioning as protective films of the thin film transistors 100 a and100 b. In FIGS. 1A and 1B, the second conductive films 114 are providedso as to overlap at least part of the semiconductor film 106 with thegate insulating film 108 and the insulating film 112 interposedtherebetween. Here, the second conductive films 114 are provided so asto cover end portions of the semiconductor films 106.

The insulating film 112 is provided so as to cover the thin filmtransistors 100 a and 100 b, and an insulating film 116 is provided soas to cover the insulating film 112 and the second conductive films 114.In addition, third conductive films 118 capable of functioning as sourceand drain electrodes of the thin film transistors 100 a and 100 b areprovided over the insulating film 116. Note that an example is shownhere in which the thin film transistors 100 a and 100 b are providedover the substrate 102 with the insulating film 104 interposedtherebetween.

The semiconductor films 106 each have a channel formation region 106 aand an impurity regions 106 b functioning as source and drain regions.The impurity regions 106 b are separately provided with the channelformation region 106 a interposed therebetween and electricallyconnected to the third conductive films 118 provided over the insulatingfilm 116.

The second conductive films 114 are provided so as to overlap at leastpart of the impurity regions 106 b in the semiconductor films 106 andcan function as the protective films of the thin film transistors 100 aand 100 b. Thus, by provision of the second conductive films 114, thestress is concentrated in a region 111 (between the thin filmtransistors 100 a and 100 b) where an element such as a transistor isnot formed (the semiconductor device is bent in the region 111) even inthe case where the semiconductor device is stressed by, for example,being bent; therefore, damages and breakages of the thin filmtransistors 100 a and 100 b can be reduced.

Further, the second conductive films 114 are provided here so as to bein contact with the third conductive films 118 in openings 132. Theopenings 132 are formed in the second conductive films 114, thereby aregion where the semiconductor film 106 and the second conductive film114 overlap with each other can be increased. Note that the openings 132are each formed in the gate insulating film 108, the insulating film112, and the insulating film 116 in order to electrically connect theimpurity region 106 b of the semiconductor film 106 and the thirdconductive film 118, and in FIGS. 1A and 1B, the openings are formed inthe second conductive films 114 as well as the gate insulating film 108,the insulating film 112, and the insulating film 116.

The second conductive films 114 are preferably provided so as to coverthe end portions of the semiconductor films 106 (for example, endportions of the impurity regions 106 b). By providing the secondconductive films 114 so as to cover the semiconductor films 106 which ismost easily damaged due to stress caused by physical force such asbending, in the thin film transistors 100 a and 100 b, it becomespossible to efficiently reduce damages of the semiconductor films 106 inthe manufacturing process of the semiconductor device or utilizationafter completion thereof and thereby improve the yield and reliabilityof the semiconductor device. In particular, by increasing an area wherethe semiconductor film 106 and the second conductive film 114 overlapwith each other (for example, by forming the openings 132 in the secondconductive films), it becomes possible to efficiently reduce damages ofthe semiconductor films 106 even in the case where the semiconductordevice is stressed by, for example, being bent and thereby improve theyield and reliability of the semiconductor device.

Note that the example is shown in which the openings are formed in thesecond conductive films 114 as well in the semiconductor device shown inFIGS. 1A and 1B; however, the semiconductor device described in thisembodiment mode is not limited to this structure and the secondconductive films 114 may be provided so as to overlap with at least partof the semiconductor films 106.

For example, a structure may be employed in which the openings are notformed in the second conductive films 114. In that case, the secondconductive films 114 having square U shapes are provided so as tooverlap with the end portions of the semiconductor films 106 (see FIGS.2A to 2C); therefore, an area where the semiconductor film 106 and thesecond conductive film 114 overlap with each other can be increased evenin the case where the openings are not formed in the second conductivefilms 114. Accordingly, even when the semiconductor device is stressed,the semiconductor films 106 can be protected effectively. In addition,as shown in FIGS. 2A to 2C, in the case where the openings are notprovided in the second conductive films 114, it is not necessary thatthe second conductive films 114 be removed, so that etching can beperformed easily. Note that FIG. 2A shows a top plan view and FIG. 2B or2C shows a cross-sectional view taken along a line A-B in FIG. 2A.

In addition, in the case of employing a structure in which the openingsare not formed in the second conductive films 114, the second conductivefilms 114 and the third conductive films 118 may be provided so as to bein contact with each other (see FIG. 2B) or so as not to be in contactwith each other (see FIG. 2C).

Alternatively, the second conductive films 114 may be provided so as tobe electrically connected to the impurity regions 106 b of thesemiconductor films 106 (see FIG. 3A). In that case, the impurityregions 106 b of the semiconductor films 106 and the second conductivefilms 114 are electrically connected through the openings 140 a formedin the gate insulating film 108 and the insulating film 112. The secondconductive films 114 and the third conductive films 118 are provided soas to be electrically connected to each other through the openings 140b.

By providing a structure as shown in FIG. 3A, it becomes unnecessary toform the openings in the second conductive films 114, and a region(area) where the semiconductor film 106 and the second conductive film114 overlap with each other can be increased. Therefore, even in thecase where the semiconductor device is stressed by, for example, beingbent, it becomes possible to relieve stress caused in the semiconductorfilms 106 and thereby reduce damages and breakages of the semiconductorfilms 106.

Note that a structure may be employed in which the openings 140 b areformed in the second conductive films 114 to increase an area where thesecond conductive film 114 and the third conductive film 118 are incontact with each other, in order to reduce resistance of the secondconductive films 114 and the third conductive films 118 (see FIG. 3B).

Thus, by employing the structures shown in FIGS. 1A to 3B, it ispossible to efficiently reduce damages of the semiconductor films 106 inthe manufacturing process of the semiconductor device or utilizationafter completion thereof and thereby improve the yield and reliabilityof the semiconductor device.

Note that in this embodiment mode, description is made using the thinfilm transistor as an example; however, an organic transistor may beprovided instead of the thin film transistor.

In addition, in the aforementioned structure, the example is describedin which the conductive films (the second conductive films 114 in FIGS.1A and 1B) are provided as the protective films of the semiconductorfilms 106 (and further the thin film transistors 100 a and 100 b).Alternatively, a structure may be employed in which semiconductor filmsare provided as protective films instead of the conductive films.

In the case of using a conductive film as a protective film, theconductive film is formed using an element selected from tantalum (Ta),tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper(Cu), chromium (Cr), niobium (Nb), and the like, or an alloy material ora compound material containing any of the above elements as its maincomponent. In the case of using a semiconductor film, silicon (Si),germanium (Ge), or the like can be used. Alternatively, silicidecontaining a metal and a semiconductor may be used as a protective film.

The structure of a semiconductor device, which is described in thisembodiment mode, can be combined with a structure of a semiconductordevice, which is described in any other embodiment mode.

Embodiment Mode 2

In this embodiment mode, an example of a method for manufacturing thesemiconductor device described in Embodiment Mode 1 is described withreference to drawings. Note that in this embodiment mode, the process isdescribed in which after an element such as a thin film transistor isformed over a supporting substrate, the element is released from thesupporting substrate to be transferred to another substrate.

First, a release layer 122 is formed over one surface of a substrate120. Subsequently, an insulating film 104 that functions as a base andan amorphous semiconductor film (for example, a film containingamorphous silicon) are formed (see FIG. 4A). Note that the release layer122, the insulating film 104, and the amorphous semiconductor film canbe sequentially formed.

As the substrate 120, a glass substrate, a quartz substrate, a metalsubstrate, a stainless steel substrate, or the like can be used. In thecase of using such a substrate, the area and the shape thereof are notparticularly limited; therefore, by using, for example, a rectangularsubstrate with one side of at least 1 meter, the productivity can beextremely increased. This merit is greatly advantageous as compared tothe case of using a circular silicon substrate. In addition, the releaselayer 122 is formed over an entire surface of the substrate 120 in thisprocess; however, the release layer 122 may be selectively provided by aphotolithography method after the release layer is formed over an entiresurface of the substrate 120 as necessary. In addition, the releaselayer 122 is formed so as to be in contact with the substrate 120;however, an insulating film may be formed as a base to be in contactwith the substrate 120 as necessary and the release layer 122 may beformed so as to be in contact with the insulating film.

As the release layer 122, a metal film, a stacked layer structure of ametal film and a metal oxide film, or the like can be used. The metalfilm is formed to have a single-layer structure or a stacked-layerstructure of a film formed of an element selected from tungsten (W),molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel(Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium(Rh), palladium (Pd), osmium (Os), and iridium (Ir), or an alloymaterial or a compound material including any of the above elements asits main component. The metal film can be formed by a sputtering method,various CVD methods such as a plasma CVD method, or the like. As thestacked layer structure of a metal film and a metal oxide film, afterthe above metal film is formed, an oxide or oxynitride of the metal filmcan be formed on the surface of the metal film by performing plasmatreatment in an oxygen atmosphere or an N₂O atmosphere, or heattreatment in an oxygen atmosphere or an N₂O atmosphere. For example, inthe case where a tungsten film is provided by a sputtering method, a CVDmethod, or the like as the metal film, a metal oxide film of tungstenoxide can be formed on the surface of the tungsten film by performingplasma treatment to the tungsten film.

The insulating film 104 is formed to have a single-layer structure or astacked-layer structure of a film containing oxide of silicon or nitrideof silicon by a sputtering method, a plasma CVD method, or the like. Inthe case where the insulating film to be a base has a two-layerstructure, a silicon nitride oxide film may be formed for a first layer,and a silicon oxynitride film may be formed for a second layer, forexample. In the case where the insulating film to be a base has athree-layer structure, a silicon oxide film, a silicon nitride oxidefilm, and a silicon oxynitride film may be formed for a first layer, asecond layer, and a third layer, respectively. Alternatively, a siliconoxynitride film, a silicon nitride oxide film, and a silicon oxynitridefilm may be formed for a first layer, a second layer, and a third layer,respectively. The insulating film to be a base functions as a blockingfilm for preventing impurities from entering from the substrate 120.

The amorphous semiconductor film is formed to a thickness of 25 to 200nm (preferably, 30 to 150 nm) by a sputtering method, an LPCVD method, aplasma CVD method, or the like.

Next, the amorphous semiconductor film is crystallized by irradiationwith laser light. Note that the amorphous semiconductor film may becrystallized by a method in which irradiation with laser light iscombined with a thermal crystallization method using an RTA or anannealing furnace, or a thermal crystallization method using a metalelement for promoting crystallization, or the like. After that, theobtained crystalline semiconductor film is etched so as to have adesired shape, thereby forming a crystalline semiconductor film 106.Then, a gate insulating film 108 is formed so as to cover thecrystalline semiconductor film 106 (see FIG. 4A).

An example of a manufacturing step of the crystalline semiconductor film106 is briefly described below. First, an amorphous semiconductor filmwith a thickness of 50 to 60 nm is formed by a plasma CVD method. Next,a solution containing nickel that is a metal element for promotingcrystallization is retained on the amorphous semiconductor film, anddehydrogenation treatment (at 500° C., for one hour) and thermalcrystallization treatment (at 550° C., for four hours) are performed tothe amorphous semiconductor film, thereby forming a crystallinesemiconductor film. After that, the crystalline semiconductor film isirradiated with laser light, and a photolithography method is used, sothat the crystalline semiconductor film 106 is formed. Note that withoutbeing subjected to the thermal crystallization which uses the metalelement for promoting crystallization, the amorphous semiconductor filmmay be crystallized only by irradiation with laser light.

The gate insulating film 108 is formed to have a single-layer structureor a stacked-layer structure of a film containing oxide of silicon ornitride of silicon by a CVD method, a sputtering method, or the like.Specifically, a film containing silicon oxide, a film containing siliconoxynitride, or a film containing silicon nitride oxide is formed to havea single-layer structure or a stacked-layer structure.

Alternatively, the gate insulating film 108 may be formed by performingplasma treatment to the semiconductor film 106 to oxidize or nitride thesurface thereof. For example, the gate insulating film 108 is formed byplasma treatment introducing a mixed gas of a rare gas such as He, Ar,Kr, or Xe and oxygen, nitrogen oxide (NO₂), ammonia, nitrogen, hydrogen,or the like. When excitation of the plasma in this case is performed byintroduction of a microwave, plasma with a low electron temperature andhigh density can be generated. By an oxygen radical (there is the casewhere an OH radical is included) or a nitrogen radical (there is thecase where an NH radical is included) generated by this high-densityplasma, the surfaces of the semiconductor films can be oxidized ornitrided.

By treatment using such high-density plasma, an insulating film with athickness of 1 to 20 nm, typically 5 to 10 nm, is formed over thesemiconductor film. Since the reaction of this case is a solid-phasereaction, interface state density between the insulating film and thesemiconductor film can be extremely low. Since such high-density plasmatreatment oxidizes (or nitrides) a semiconductor film (crystallinesilicon, or polycrystalline silicon) directly, unevenness of a thicknessof the insulating film to be formed can be extremely small, ideally. Inaddition, oxidation is not strengthened even in a crystal grain boundaryof crystalline silicon, which makes a very preferable condition. Thatis, by a solid-phase oxidation of the surface of the semiconductor filmby the high-density plasma treatment shown here, an insulating film withgood uniformity and low interface state density can be formed withoutabnormal oxidation reaction in a crystal grain boundary.

As the gate insulating film 108, an insulating film formed by thehigh-density plasma treatment may be used by itself, or an insulatingfilm of silicon oxide, silicon oxynitride, silicon nitride, or the likemay be formed thereover by a CVD method using plasma or thermalreaction, so as to make stacked layers. In any case, a transistorincluding an insulating film formed by high-density plasma, in a part ofthe gate insulating film or in the whole gate insulating film, canreduce variation in the characteristics.

Furthermore, a semiconductor film is irradiated with a continuous wavelaser or a laser beam oscillated at a frequency of at least 10 MHz andis scanned in one direction for crystallization, so that thesemiconductor film 106 which has a characteristic that the crystal growsin the scanning direction of the beam is obtained. When a transistor isprovided so that the scanning direction is aligned with the channellength direction (a direction in which carriers flow when a channelformation region is formed) and the above gate insulating layer is used,a thin film transistor (TFT) with less characteristic variation and highfield effect mobility can be obtained.

Next, a conductive film for forming a gate electrode is formed over thegate insulating film 108. Here, a conductive film 124 and a conductivefilm 126 are sequentially stacked (see FIG. 4B). The conductive film 124is formed to a thickness of 20 to 100 nm by a plasma CVD method or asputtering method, and the conductive film 126 is formed to a thicknessof 100 to 400 nm by a plasma CVD method or a sputtering method. Theconductive film 124 and the conductive film 126 are formed using anelement selected from tantalum (Ta), tungsten (W), titanium (Ti),molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium(Nb), and the like, an alloy material or a compound material containingany of the above elements as its main component, or an alloy material ora compound material containing any of the above elements and a silicon(Si) element. Alternatively, they are formed using a semiconductormaterial (for example, silicon (Si)) typified by polycrystalline silicondoped with an impurity element such as phosphorus. As examples of acombination of the conductive film 124 and the conductive film 126, atantalum nitride film and a tungsten film, a tungsten nitride film and atungsten film, a molybdenum nitride film and a molybdenum film, and thelike can be given. Since tungsten and tantalum nitride have high heatresistance, heat treatment for thermal activation can be performed afterthe conductive film 124 and the conductive film 126 are formed. Inaddition, in a case of a three-layer structure instead of a two-layerstructure, a stacked layer structure of a molybdenum film, an aluminumfilm, and a molybdenum film is preferably employed.

Next, after a resist mask is formed by a photolithography method and theconductive film 124 and the conductive film 126 are selectively etched,thereby the first conductive films 110 are formed, impurity elements areintroduced into the semiconductor films 106 by using the firstconductive films 110 as masks to form the channel formation regions 106a and the impurity regions 106 b (see FIG. 4C). The first conductivefilms 110 function as gate electrodes (including gate wirings) in thethin film transistor, and the impurity regions 106 b function as sourceand drain regions in the thin film transistor.

Further, as an impurity element to be introduced, an n-type impurityelement or a p-type impurity element is used. As an n-type impurityelement, phosphorus (P), arsenic (As), or the like can be used. As ap-type impurity element, boron (B), aluminum (Al), gallium (Ga), or thelike can be used. Here, phosphorus (P) is used for the impurity elementand an n-channel thin film transistor is formed.

After the insulating film 112 is formed so as to cover the firstconductive film 110 and the gate insulating film 108, a conductive film128 and a conductive film 130 are sequentially stacked over theinsulating film 112 (see FIG. 4D).

The conductive film 128 is formed to a thickness of 20 to 100 nm by aplasma CVD method or a sputtering method, and the conductive film 130 isformed to a thickness of 100 to 400 nm by a plasma CVD method or asputtering method. The conductive film 128 and the conductive film 130are formed using an element selected from tantalum (Ta), tungsten (W),titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium(Cr), niobium (Nb), and the like, an alloy material or a compoundmaterial containing any of the above elements as its main component, oran alloy material or a compound material containing any of the aboveelements and a silicon (Si) element. Alternatively, they are formedusing a semiconductor material (for example, silicon (Si)) typified bypolycrystalline silicon doped with an impurity element such asphosphorus. As examples of a combination of the conductive film 128 andthe conductive film 130, a tantalum nitride film and a tungsten film, atungsten nitride film and a tungsten film, a molybdenum nitride film anda molybdenum film, and the like can be given. Since tungsten andtantalum nitride have high heat resistance, heat treatment for thermalactivation can be performed after the conductive film 128 and theconductive film 130 are formed. In addition, in a case of a three-layerstructure instead of a two-layer structure, a stacked layer structure ofa molybdenum film, an aluminum film, and a molybdenum film is preferablyadopted. Here, the case where the conductive film 128 and the conductivefilm 130 are formed of the same materials as the conductive film 124 andthe conductive film 126, respectively, is shown; however, the presentinvention is not limited to this.

The insulating film 112 can be formed to have a single-layer structureor a stacked-layer structure of an insulating film containing oxygen ornitrogen, such as a silicon oxide (SiO_(x)) film, a silicon nitride(SiN_(x)) film, a silicon oxynitride (SiO_(x)N_(y)) (x>y) film, and asilicon nitride oxide (SiN_(x)O_(y)) (x>y) film; a film containingcarbon such as DLC (Diamond Like Carbon); or a film made of an organicmaterial such as epoxy, polyimide, polyamide, polyvinylphenol,benzocyclobutene, or acrylic, or a siloxane material such as a siloxaneresin. Note that the siloxane material corresponds to a materialincluding a Si—O—Si bond. Siloxane is composed of a skeleton formed bythe bond of silicon (Si) and oxygen (O), in which an organic groupcontaining at least hydrogen (such as an alkyl group or aromatichydrocarbon) is contained as a substituent. Alternatively, a fluorogroup may be used as the substituent. Further alternatively, a fluorogroup and an organic group containing at least hydrogen may be used asthe substituent.

A resist mask is formed by a photolithography method and the conductivefilm 128 and the conductive film 130 are selectively etched, thereby thesecond conductive films 114 are formed (see FIG. 4E). The secondconductive films 114 function as protective films of the semiconductorfilms 106 and further the thin film transistor and are formed so as tocover end portions of the impurity regions 106 b of the semiconductorfilms 106. Note that in this embodiment mode, the case is described inwhich the first conductive film 110 and the second conductive film 114are formed of the same material; however, they may be formed ofdifferent materials. In addition, the second conductive films 114 havingisland shapes can be formed so as to cover the end portions of theimpurity regions 106 b. Note that upon formation of the secondconductive films 114 functioning as the protective films of thesemiconductor films 106 by selectively etching the conductive film 128and the conductive film 130, a conductive film pattern functioning as awiring may be formed. In that case, the conductive film functioning as awiring is provided over the same layer as the second conductive films114 (here, the insulating film 112).

After the insulating film 116 is formed so as to cover the insulatingfilm 112 and the second conductive films 114, openings 132 which reachthe impurity regions 106 b of the semiconductor films 106 are formed topartially expose surfaces of the semiconductor films 106 (see FIG. 5A).Here, the gate insulating film 108, the insulating film 112, the secondconductive films 114, and the insulating film 116 are partially etchedto form the openings 132.

The insulating film 116 can be formed to have a single-layer structureor a stacked-layer structure of an insulating film containing oxygen ornitrogen, such as a silicon oxide (SiO_(x)) film, a silicon nitride(SiN_(x)) film, a silicon oxynitride (SiO_(x)N_(y)) (x>y) film, or asilicon nitride oxide (SiN_(x)O_(y)) (x>y) film; a film containingcarbon such as DLC (Diamond Like Carbon); or a film made of an organicmaterial such as epoxy, polyimide, polyamide, polyvinylphenol,benzocyclobutene, or acrylic; and a siloxane material such as a siloxaneresin.

Next, the third conductive films 118 are selectively formed so as tofill the openings 132, and an insulating film 134 is formed so as tocover the third conductive films 118 (see FIG. 5B).

The conductive film 118 is formed to have a single layer or stackedlayers using an element selected from aluminum (Al), tungsten (W),titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum(Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium(Nd), carbon (C), and silicon (Si), or an alloy material or a compoundmaterial containing any of the above elements as its main component, bya CVD method, a sputtering method, or the like. An alloy materialcontaining aluminum as its main component corresponds to a materialwhich contains aluminum as its main component and also contains nickel,or an alloy material which contains aluminum as its main component andalso contains nickel and one or both of carbon and silicon, for example.The conductive film 118 preferably employs, for example, a stacked layerstructure of a barrier film, an aluminum-silicon (Al—Si) film, and abarrier film, or a stacked layer structure of a barrier film, analuminum-silicon (Al—Si) film, a titanium nitride film, and a barrierfilm. It is to be noted that a barrier film corresponds to a thin filmformed by using titanium, a nitride of titanium, molybdenum, or anitride of molybdenum. Aluminum and aluminum silicon which have lowresistance and are inexpensive are optimal materials for forming theconductive film 118. In addition, generation of a hillock of aluminum oraluminum silicon can be prevented when upper and lower barrier layersare formed. Furthermore, when the barrier film is formed by usingtitanium that is a highly-reducible element, even if a thin naturaloxide film is formed over the crystalline semiconductor film, thenatural oxide film can be reduced so that preferable contact with thecrystalline semiconductor film can be obtained. Note that the barrierfilm may be formed using the same material as the first conductive film110 or the second conductive film 114.

The insulating film 134 can be formed to have a single-layer structureor a stacked-layer structure of an insulating film containing oxygen ornitrogen, such as a silicon oxide (SiO_(x)) film, a silicon nitride(SiN_(x)) film, a silicon oxynitride (SiO_(x)N_(y)) (x>y) film, and asilicon nitride oxide (SiN_(x)O_(y)) (x>y) film; a film containingcarbon such as DLC (Diamond Like Carbon); or a film made of an organicmaterial such as epoxy, polyimide, polyamide, polyvinylphenol,benzocyclobutene, or acrylic; and a siloxane material such as a siloxaneresin.

Next, an element formation layer 142 including the thin film transistors100 a and 100 b and the like is released from the substrate 120. Here,openings are formed in the element formation layer 142 by laser light(such as UV light) irradiation, and then, one surface (a surface wherethe insulating film 134 is exposed) of the element formation layer 142is attached to a first sheet material 136 and the element formationlayer 142 is released from the substrate 120 by using physical force(see FIG. 5C).

Alternatively, an etchant may be introduced into the openings before theelement formation layer 142 is released from the substrate 120; therebyselectively removing the release layer 122. As the etchant, gas or aliquid containing halogen fluoride or an interhalogen compound is used.For example, chlorine trifluoride (CIF₃) can be used as gas containinghalogen fluoride.

In general, when the element formation layer 142 is released from thesubstrate 120, the thin film transistors 100 a and 100 b are stressed,and thus the semiconductor films 106 or the like might be damaged by thethin film transistors 100 a and 100 b. However, by provision of thesecond conductive films 114 functioning as protective films, even in thecase where the element formation layer 142 is stressed by, for example,being bent, the stress is concentrated in the region 111 where anelement such as a transistor is not formed and thereby damages andbreakages of the thin film transistors 100 a and 100 b can be reduced.In particular, in the case where an element such as a transistor isformed over a supporting substrate and then transferred to anothersubstrate, it is highly efficient to provide the second conductive film114.

Note that releasing is performed with a surface to be released gettingwet by water or a solution such as ozone water, thereby preventing anelement such as the thin film transistor 100 a or 100 b from beingdamaged by static electricity or the like.

Next, a second sheet material 138 is provided on the other surface (thesurface released from the substrate 120) of the element formation layer142, and then one or both of heat treatment and pressure treatment areperformed to attach the second sheet material 138 to the elementformation layer 142 (see FIG. 5D). As the first sheet material 136 andthe second sheet material 138, a hot-melt film, a plastic substrate overwhich an adhesive layer is formed, or the like can be used.

As the first sheet material 136 and the second sheet material 138, afilm on which an antistatic treatment for preventing static electricityor the like is performed (hereinafter referred to as an antistatic film)may be used. As the antistatic film, a film with an antistatic materialdispersed in a resin, a film with an antistatic material attachedthereon, and the like can be given as examples. The film provided withan antistatic material may be a film with an antistatic materialprovided over one of its surfaces, or a film with an antistatic materialprovided over each of its surfaces. As for the film with an antistaticmaterial provided over one of its surfaces, the film may be attached tothe layer so that the antistatic material is placed on the inner side ofthe film or the outer side of the film. Note that the antistaticmaterial may be provided over the entire surface of the film, or over apart of the film. As the antistatic material here, a metal, indium tinoxide (ITO), or a surfactant such as an amphoteric surfactant, acationic surfactant, or a nonionic surfactant can be used.Alternatively, as the antistatic material, a resin material containingcross-linked copolymer having a carboxyl group and a quaternary ammoniumbase on its side chain, or the like can be used. By attaching, mixing,or applying such a material to a film, an antistatic film can be formed.The sealing is performed using the antistatic film, and thus asemiconductor element can be prevented from being adversely affected dueto static electricity from outside when dealt with as a product.

Upon or after provision of the second sheet material 138, the firstsheet material 136 may be released. By removing the first sheet material136, a semiconductor device can be formed thinner. Note that, in thatcase, as the first sheet material 136, a thermal release tape of whichadhesiveness is lowered by heat can be used, for example. In addition, asheet material is referred to as a substrate in some cases, and thesecond sheet material 138 corresponds to the substrate 102 in FIGS. 1Aand 1B.

Through the above process, a semiconductor device can be manufactured.Note that, in this embodiment mode, the process is described in whichafter a thin film transistor is formed over a supporting substrate, theelement is released from the supporting substrate to be transferred toanother substrate; however, the manufacturing method described in thisembodiment mode is not limited to this. For example, the thin filmtransistors 100 a and 100 b may be directly provided over the substrate102. In that case, it is only necessary that the substrate 102 be usedinstead of the substrate 120 and the release layer 122 be not providedin the above process. As the substrate 102, a metal substrate such as aglass substrate, a quartz substrate, or a stainless steel substrate, aplastic substrate, or the like may be used.

Note that the methods for manufacturing a semiconductor device, whichare shown in FIGS. 4A to 5D, are the methods for manufacturing thesemiconductor device of the above embodiment mode, which is shown inFIGS. 1A and 1B. The semiconductor devices shown in FIGS. 2A to 2C andFIGS. 3A and 3B can also be manufactured by the above manufacturingmethods.

For example, in the case of manufacturing the semiconductor device shownin FIGS. 2A to 2C, the second conductive films 114 may be selectivelyetched except for a portion of the second conductive films 114 in whichthe openings 132 are formed later in FIG. 4E.

The case of manufacturing the semiconductor device shown in FIGS. 3A and3B is described with reference to FIGS. 6A to 6E.

First, a structure up to that shown in FIG. 4C is similarly formed, theinsulating films 112 are formed so as to cover the gate insulating films108 and the first conductive films 110, and then the gate insulatingfilms 108 and the insulating films 112 are selectively removed to formthe openings 140 a (see FIG. 6A). In the openings 140 a, at least partof the impurity regions 106 b of the semiconductor films 106 is exposed.

Next, the conductive film 128 and the conductive film 130 aresequentially formed over the insulating films 112 so as to beelectrically connected to the impurity regions 106 b of thesemiconductor films 106 (see FIG. 6B). Here, the conductive film 128 andthe conductive film 130 are formed in the openings 140 a.

A resist mask is formed by a photolithography method and the conductivefilm 128 and the conductive film 130 are selectively etched, thereby thesecond conductive films 114 are formed (see FIG. 6C). Note that, here,the second conductive films 114 are electrically connected to theimpurity regions 106 b of the semiconductor films 106.

After the insulating film 116 is formed so as to cover the insulatingfilm 112 and the second conductive films 114, openings 140 b which reachthe second conductive films 114 are formed to partially expose surfacesof the second conductive films 114 (see FIG. 6D). Here, the insulatingfilm 116 is partially etched to form the openings 140 b. Note that theopenings 140 b may be formed by partially etching the second conductivefilms 114.

Next, the third conductive films 118 are selectively formed so as tofill the openings 140 b (see FIG. 6E). Thereafter, by using themanufacturing method described in the above embodiment mode, asemiconductor device can be manufactured.

The method for manufacturing a semiconductor device, which is describedin this embodiment mode, can be combined with that described in anyother embodiment mode.

Embodiment Mode 3

In this embodiment mode, the case where, in a thin film transistor ofthe semiconductor device described in Embodiment Mode 1 or 2, aninsulating film is formed to be in contact with a side surface of thefirst conductive film functioning as a gate electrode and an LDD regionis formed below the insulating film is described with reference todrawings.

The semiconductor device described in this embodiment mode includes thethin film transistors 100 a and 100 b, and insulating films 144 areprovided to be in contact with a side surface of the first conductivefilms 110 functioning as gate electrodes, which are included in the thinfilm transistors 100 a and 100 b (see FIGS. 7A and 7B). The insulatingfilms 144 are also referred to as side walls, and a structure in whichLDD regions are provided below the insulating films 144 can be employed.Note that FIG. 7A shows a structure in FIGS. 1A and 1B in which theinsulating films 144 and the impurity regions 106 c functioning as LDDregions are additionally provided, and FIG. 7B shows a structure inFIGS. 3A and 3B in which the insulating films 144 and the impurityregions 106 c functioning as LDD regions are additionally provided.

Next, an example of a method for manufacturing the insulating films 144is described with reference to FIGS. 8A to 8E.

First, a structure up to that of Embodiment Mode 2, which is shown inFIG. 4B, is similarly formed, a resist mask is formed by aphotolithography method and the first conductive films 110 are formed byselectively etching the conductive film 124 and the conductive film 126.Then, a first impurity element is introduced into the semiconductorfilms 106 by using the first conductive films 110 as masks, so that thechannel formation regions 106 a and the impurity regions 146 are formed(see FIG. 8A). As the first impurity element, an n-type impurity elementor a p-type impurity element is used. As an n-type impurity element,phosphorus (P), arsenic (As), or the like can be used. As a p-typeimpurity element, boron (B), aluminum (Al), gallium (Ga), or the likecan be used. Here, the case is described in which phosphorus (P) is usedfor the impurity element and an n-channel thin film transistor isformed.

Next, insulating films 148 are formed so as to cover the firstconductive film 110 and the gate insulating film 108 (see FIG. 8B). Eachof the insulating films 148 is formed to have a single-layer structureor a stacked-layer structure of a film including an inorganic materialsuch as silicon, an oxide of silicon, or a nitride of silicon, and afilm including an organic material such as an organic resin, by a plasmaCVD method, a sputtering method, or the like.

Next, the insulating films 148 are selectively etched by anisotropicetching which mainly etches in a perpendicular direction, so that theinsulating films 148 (side walls) which are in contact with sidesurfaces of the first conductive films 110 are formed. Note that thereis the case where upon formation of the insulating films 148, the gateinsulating films 108 and the insulating film 104 are partially etched tobe removed (see FIG. 8C). The gate insulating films 108 is partiallyremoved, and thus a left portion of the gate insulating film 108 isbelow the first conductive film 110 and the insulating films 148.

Next, a second impurity element is introduced into the semiconductorfilms 106 by using the first conductive films 110 and the insulatingfilm 148 as masks, so that the impurity regions 106 b functioning assource and drain regions and the impurity regions 106 c functioning asLDD regions are formed (see FIG. 8D). As the second impurity element, ann-type impurity element or a p-type impurity element is used. As ann-type impurity element, phosphorus (P), arsenic (As), or the like canbe used. As a p-type impurity element, boron (B), aluminum (Al), gallium(Ga), or the like can be used. In addition, the second impurity elementis introduced at higher concentration than the first impurity element.Here, phosphorus (P) is used for the impurity element.

Next, the insulating film 112, the conductive film 128, and theconductive film 130 are sequentially formed so as to cover thesemiconductor films 106, the first conductive film 110, and theinsulating films 148 (see FIG. 8E). Thereafter, the semiconductor deviceshown in FIGS. 7A and 7B can be manufactured through the processdescribed in Embodiment Mode 1, which is shown in FIGS. 4E to 6E.

The structure of a semiconductor device or the manufacturing methodthereof, which is described in this embodiment mode, can be combinedwith that described in any other embodiment mode.

Embodiment Mode 4

In this embodiment mode, a semiconductor device which is different fromthat in any of the above embodiment modes is described with reference todrawings. Specifically, the case where a first conductive film which canfunction as a gate electrode and a second conductive film which canfunction as a protective film are formed of the same material at thesame time is described.

The semiconductor device described in this embodiment mode is providedwith the first conductive films 110 which can function as gateelectrodes of the thin film transistors 100 a and 100 b and the secondconductive films 114 which can function as protective films over a gateinsulating film 108. The first conductive films 110 and the secondconductive films 114 are formed of the same material. Further, in eachof the semiconductor films 106, one of the impurity regions 106 bfunctioning as source and drain regions and one of the impurity regions106 c functioning as LDD regions are provided separately from the otherof the impurity regions 106 b functioning as source and drain regionsand the other of the impurity regions 106 c functioning as LDD regionswith the channel formation region 106 a interposed therebetween. Notethat the other portions can be provided similarly to those in thestructure described in any of the above embodiment modes (see FIGS. 9Aand 9B).

The second conductive films 114 are provided so as to overlap with atleast part of the impurity regions 106 b in the semiconductor films 106with the gate insulating film 108 interposed therebetween and canfunction as the semiconductor films 106 and further the protective filmsof the thin film transistors 100 a and 100 b. In addition, here, thefirst conductive films 110 and the second conductive films 114 whichfunction as gate electrodes can be manufactured at the same time in themanufacturing process of the semiconductor device. That is, the firstconductive films 110 and the second conductive films 114 are formed ofthe same material over the same layer (over the gate insulating film108, here).

Further, in FIGS. 9A and 9B, the second conductive films 114 areprovided so as to be in contact with the third conductive films 118 inopenings 132. The openings 132 are formed in the second conductive films114; therefore, a region where the semiconductor film 106 and the secondconductive film 114 overlap with each other can be increased. Note thatthe openings 132 are each formed in the gate insulating film 108 and theinsulating film 116 in order to electrically connect the impurity region106 b of the semiconductor film 106 and the third conductive film 118,and in FIGS. 9A and 9B, the openings are formed in the second conductivefilms 114 as well.

Thus, by provision of the second conductive films 114, the stress isconcentrated in a region 111 (between the thin film transistors 100 aand 100 b) where an element such as a transistor is not formed (thesemiconductor device is bent in the region 111) even in the case wherethe semiconductor device is stressed by, for example, being bent;therefore, damages and breakages of the thin film transistors 100 a and100 b can be reduced.

The second conductive films 114 are preferably provided so as to coverthe end portions of the semiconductor films 106 (for example, endportions of the impurity regions 106 b). By providing the secondconductive films 114 so as to cover the end portions of thesemiconductor films 106, which is most easily damaged due to externalphysical stress such as bending, in the thin film transistors 100 a and100 b, it becomes possible to efficiently reduce damages on thesemiconductor films 106 in the manufacturing process of thesemiconductor device or utilization after completion thereof and therebyimprove the yield and reliability of the semiconductor device. Inparticular, by increasing an area where the semiconductor film 106 andthe second conductive film 114 overlap with each other (for example, byforming the openings 132 in the second conductive films 114), it becomespossible to efficiently reduce damages on the semiconductor films 106and thereby improve the yield and reliability of the semiconductordevice.

Note that an example is shown in which the openings are formed in thesecond conductive films 114 as well in the semiconductor device shown inFIGS. 9A and 9B; however, the semiconductor device described in thisembodiment mode is not limited to this structure and the secondconductive films 114 may be provided so as to overlap with at least partof the semiconductor film 106.

For example, a structure may be employed in which the openings are notformed in the second conductive films 114 (see FIGS. 10A to 10C). Notethat, as shown in FIGS. 2A to 2C described above, the second conductivefilms 114 having square U shapes may be provided so as to cover the edgeportions of the semiconductor films 106. It is needless to say that thesecond conductive films 114 may be provided in FIGS. 2A to 2C as shownin FIGS. 10A to 10C. Note that FIG. 10A shows a top plan view and FIG.10B or 10C shows a cross-sectional view taken along a line A-B in FIG.10A.

In addition, in the case of employing a structure in which the openingsare not formed in the second conductive films 114, the second conductivefilms 114 and the third conductive films 118 can be provided so as to bein contact with each other. Note that, in that case, part of the thirdconductive films 118 may be provided on the second conductive films 114(see FIG. 10B). Note that a structure may be provided similarly to thatshown in FIG. 2B, which is described above, or the structure in FIG. 2Bin which part of the third conductive films 118 are provided on thesecond conductive films 114 may be employed. Alternatively, the secondconductive films 114 and the third conductive films 118 may be providedso as not to be in contact with each other (see FIG. 10C).

As shown in FIGS. 10A to 10C, in the case where the openings are notprovided in the second conductive films 114, it is not necessary thatthe second conductive films 114 be removed when the openings are formed,so that etching can be performed easily.

Alternatively, the second conductive films 114 may be provided so as tobe electrically connected to the impurity regions 106 b of thesemiconductor films 106 (see FIG. 11). In that case, the secondconductive films 114 can be provided so as to be in contact with thesemiconductor films 106. Here, an example is shown in which the secondconductive films 114 are provided so as to cover the end portions of thesemiconductor films 106 (the end portions of the impurity regions 106b). The second conductive films 114 and the third conductive films 118are electrically connected to each other through the openings 140 b.

Thus, by providing the second conductive films 114 to be in contact withthe semiconductor films 106, it is possible to efficiently reducedamages on the semiconductor films 106 in the manufacturing process ofthe semiconductor device or utilization after completion thereof andthereby improve the yield and reliability of the semiconductor device.In addition, by removing the gate insulating film 108 to increase anarea where the second conductive film 114 and the impurity region 106 bof the semiconductor film 106 are in contact with each other, it becomespossible to reduce connection resistance.

Next, an example of a method for manufacturing the semiconductor devicedescribed above is described with reference to drawings. Note that anexample is described here in which a thin film transistor is formed overa substrate; however, the process may be used in which after an elementsuch as a thin film transistor is formed over a supporting substrate,the element is released from the supporting substrate to be transferredto another substrate as described in Embodiment Mode 2.

After the semiconductor films 106 are formed over the substrate 102 withthe insulating film 104 to be a base interposed therebetween, the gateinsulating film 108 is formed so as cover the semiconductor films 106(see FIG. 12A). Note that the materials and the manufacturing methodwhich are described in Embodiment Mode 2 can be applied to theinsulating film 104, the semiconductor films 106, and the gateinsulating film 108.

Next, resists 150 are selectively formed over the semiconductor films106 with the gate insulating film 108 interposed therebetween, and thena first impurity element is introduced into the semiconductor films 106by using the resists 150 as masks, so that the impurity regions 106 bare formed (see FIG. 12B). As the first impurity element, an n-typeimpurity element or a p-type impurity element is used. As an n-typeimpurity element, phosphorus (P), arsenic (As), or the like can be used.As a p-type impurity element, boron (B), aluminum (Al), gallium (Ga), orthe like can be used. Here, phosphorus (P) is used for the impurityelement. Note that the impurity regions 106 b function as source anddrain regions in the thin film transistor.

Next, conductive films for forming a gate electrode and a protectivefilm are formed over the gate insulating film 108. Here, a conductivefilm 124 and a conductive-film 126 are sequentially stacked (see FIG.12C). The conductive film 124 is formed to a thickness of 20 to 100 nmby a plasma CVD method or a sputtering method, and the conductive film126 is formed to a thickness of 100 to 400 nm by a plasma CVD method ora sputtering method. The conductive film 124 and the conductive film 126are formed using an element selected from silicon (Si), tantalum (Ta),tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper(Cu), chromium (Cr), niobium (Nb), and the like, or an alloy material ora compound material containing any of the above elements as its maincomponent. Alternatively, they are formed using a semiconductor materialtypified by polycrystalline silicon doped with an impurity element suchas phosphorus. As examples of a combination of the conductive film 124and the conductive film 126, a tantalum nitride film and a tungstenfilm, a tungsten nitride film and a tungsten film, a molybdenum nitridefilm and a molybdenum film, and the like can be given. Since tungstenand tantalum nitride have high heat resistance, heat treatment forthermal activation can be performed after the conductive film 124 andthe conductive film 126 are formed. In addition, in a case of athree-layer structure instead of a two-layer structure, a stacked layerstructure of a molybdenum film, an aluminum film, and a molybdenum filmis preferably employed.

A resist mask is formed by a photolithography method and the conductivefilm 124 and the conductive film 126 are selectively etched, so that thefirst conductive films 110 and the second conductive films 114 areformed (see FIG. 12D).

The second conductive films 114 are provided so as to overlap with atleast the impurity regions 106 b of the semiconductor films 106 and canfunction as protective films of the semiconductor films 106. Inaddition, here, the first conductive films 110 functioning as gateelectrodes and the second conductive films 114 can be manufactured atthe same time in the manufacturing steps. That is, the first conductivefilms 110 and the second conductive films 114 can be formed of the samematerial (a stacked-layer structure of the conductive film 124 and theconductive film 126, here) over the same layer (over the gate insulatingfilm 108, here). In that case, the second conductive films 114 can beformed while the number of manufacturing steps is not increased.

Next, a second impurity element is introduced into the semiconductorfilms 106 by using the first conductive films 110 and the secondconductive films 114 as masks, so that the impurity regions 106 c andthe channel formation regions 106 a are formed (see FIG. 12E). As thesecond impurity element, an n-type impurity element or a p-type impurityelement is used. As an n-type impurity element, phosphorus (P), arsenic(As), or the like can be used. As a p-type impurity element, boron (B),aluminum (Al), gallium (Ga), or the like can be used. Here, the case isdescribed in which phosphorus (P) is used for the impurity element andan n-channel thin film transistor is formed. Note that the impurityregions 106 c function as LDD regions in the thin film transistor.

In this embodiment mode, when the conductive film 124 and the conductivefilm 126 are selectively etched to form the first conductive films 110by a photolithography method, the first conductive films 110 are formedso as to have a smaller width than regions of the semiconductor films106 to which the first impurity element is not introduced (the width ofthe region in a direction parallel to source region and drain regions),in view of a margin. In such a manner, an alignment margin in formationof a gate electrode can be maintained even in the case of manufacturinga minuter transistor.

Note that the semiconductor device of this embodiment mode is notlimited to this structure. Alternatively, a structure may be employed inwhich the impurity regions 106 c are not provided.

After the insulating film 116 is formed so as to cover the firstconductive film 110 and the second conductive films 114, the openings132 which reach the impurity regions 106 b of the semiconductor films106 are formed to partially expose surfaces of the semiconductor films106 (see FIG. 13A). Here, the gate insulating film 108, the secondconductive films 114, and the insulating film 116 are partially etchedto form the openings 132.

Next, the third conductive films 118 are selectively formed so as tofill the openings 132 and be connected to the impurity regions 106 b(see FIG. 13B).

Through the above process, a semiconductor device can be manufactured.Note that, in this embodiment mode, the process is described in whichthe thin film transistor is directly provided over the substrate 102.Alternatively, a process may be used in which after an element such as athin film transistor is formed over a supporting substrate, the elementis released from the supporting substrate to be transferred to thesubstrate 102 as described in Embodiment Mode 2. In that case, asupporting substrate over which a release layer is formed may be usedinstead of the substrate 102.

Note that the methods for manufacturing a semiconductor device, whichare shown in FIGS. 12A to 13B, are the methods for manufacturing thesemiconductor device shown in FIGS. 9A and 9B. The semiconductor devicesshown in FIGS. 10A to 10C and FIG. 11 can also be manufactured by theaforementioned manufacturing methods.

For example, in the case of manufacturing the semiconductor device shownin FIGS. 10A to 10C, the second conductive films 114 may be selectivelyetched except for a portion of the second conductive films 114 in whichthe openings 132 are formed later in FIG. 12D.

The case of manufacturing the semiconductor device shown in FIG. 11 isdescribed with reference to FIGS. 14A to 14E.

First, after a structure up to that shown in FIG. 12B is similarlyformed, the gate insulating films 108 are selectively removed using theresists 150 as a mask (see FIG. 14A). Note that, after the gateinsulating films 108 are selectively removed, the first impurity elementmay be introduced to form the impurity regions 106 b.

Next, the conductive film 124 and the conductive film 126 aresequentially formed so as to cover the semiconductor films 106 and thegate insulating films 108 (see FIG. 14B).

A resist mask is formed by a photolithography method and the conductivefilm 124 and the conductive film 126 are selectively etched, so that thefirst conductive films 110 and the second conductive films 114 areformed. Subsequently, the second impurity element is introduced usingthe first conductive films 110 and the second conductive films 114 asmasks to form the impurity regions 106 c and the channel formationregions 106 a (see FIG. 14C).

After the insulating film 116 is formed so as to cover the firstconductive films 110 and the second conductive films 114, openings 140 bwhich reach the second conductive films 114 are formed to partiallyexpose surfaces of the second conductive films 114 (see FIG. 14D).

Next, the third conductive films 118 are selectively formed so as tofill the openings 140 b and be electrically connected to the secondconductive films 114 (see FIG. 14E).

Through the above process, the semiconductor device shown in FIG. 11 canbe manufactured.

The structure or the manufacturing method of a semiconductor device,which is described in this embodiment mode, can be combined with thatdescribed in any of the other embodiment modes.

Embodiment Mode 5

In this embodiment mode, a semiconductor device which is different fromthat in any of the above embodiment modes is described with reference todrawings. Specifically, a semiconductor device which is different fromthat in Embodiment Mode 4 and in which a first conductive film which canfunction as a gate electrode and a second conductive film which canfunction as a protective film are formed of the same material at thesame time is described.

First, a structure up to that shown in FIG. 4B of Embodiment Mode 2 issimilarly formed (see FIG. 15A).

A resist mask is formed by a photolithography method and the conductivefilm 124 and the conductive film 126 are selectively etched, so that thefirst conductive films 110 and the second conductive films 114 areformed (see FIG. 15B).

Next, an impurity element is introduced into the semiconductor films 106by using the first conductive films 110 and the second conductive films114 as masks, so that the impurity regions 106 b, the channel formationregions 106 a, and regions 106 d are formed (see FIG. 15C). As theimpurity element, an n-type impurity element or a p-type impurityelement is used. As an n-type impurity element, phosphorus (P), arsenic(As), or the like can be used. As a p-type impurity element, boron (B),aluminum (Al), gallium (Ga), or the like can be used. Here, boron (B) isused for the impurity element and a p-channel thin film transistor isformed. It is needles to say that phosphorus (P) may be introduced toform an n-channel thin film transistor. Note that the impurity regions106 b function as source and drain regions in the thin film transistor.

An impurity element is not introduced into the regions 106 d formed inthe semiconductor films 106 below the second conductive films 114, andconcentration of impurity elements included in the semiconductor films106 is approximately the same as that in the channel formation regions106 a. For example, in the case where an impurity element is introducedinto the semiconductor film 106 in advance in order to control athreshold voltage of the transistor, similar impurity element isincluded in the channel formation regions 106 a and the regions 106 d.

After the insulating film 116 is formed so as to cover the firstconductive films 110 and the second conductive films 114, openings whichreach the impurity regions 106 b of the semiconductor films 106 areformed to partially expose surfaces of the semiconductor films 106 (seeFIG. 15D).

Next, the third conductive films 118 are selectively formed so as tofill the openings and be electrically connected to the impurity regions106 b (see FIG. 15E).

After that, a semiconductor device is manufactured through the processshown in FIGS. 5B to 5D. Note that, in this embodiment mode, the processis described in which after a thin film transistor is formed over asupporting substrate, the element is released from the supportingsubstrate to be transferred to another substrate; however, themanufacturing method described in this embodiment mode is not limited tothis. For example, the thin film transistors 100 a and 100 b may bedirectly provided over the substrate 102.

As shown in FIGS. 2B and 10B, the second conductive films 114 and thethird conductive films 118 may be provided so as to be in contact witheach other, or as shown in FIGS. 7A and 7B, insulating films (sidewalls) which are in contact with side surfaces of the first conductivefilms 110, and LDD regions may be provided.

Note that the structure or the manufacturing method of a semiconductordevice, which are described in this embodiment mode, can be combinedwith that described in any of the other embodiment modes.

Embodiment Mode 6

In this embodiment mode, a semiconductor device which is different fromthat in any of the above embodiment modes is described with reference todrawings. Specifically, a semiconductor device is described in which alayer to be a protective film of a thin film transistor is providedbelow the thin film transistor.

An example of the semiconductor device described in this embodiment modeis described with reference to FIGS. 16A and 16B. Note that FIG. 16Ashows a top plan view and FIG. 16B shows a cross-sectional view takenalong a line A-B in FIG. 16A.

In the semiconductor device shown in FIGS. 16A and 16B, the thin filmtransistors 100 a and 100 b are provided over protective films 204 whichare provided over the substrate 102. The protective films 204 havingisland shapes are provided so as to overlap with the semiconductor films106 having island shapes, which are included in the thin filmtransistors 100 a and 100 b, with the insulating film 104 interposedtherebetween. Further, the protective films 204 are each provided so asto have a larger area than the semiconductor film 106. In addition, inthe semiconductor device shown in FIGS. 16A and 16B, the protectivefilms 204 are provided instead of the second conductive films 114 in thesemiconductor device shown in FIGS. 1A and 1B. Note that explanation forsimilar portions to those in FIGS. 1A and 1B is omitted.

Thus, by providing the protective films 204 so as to overlap with thethin film transistor, the stress is concentrated in the region 111(between the thin film transistors 100 a and 100 b) where an elementsuch as a transistor is not formed (the semiconductor device is bent inthe region 111) even in the case where the semiconductor device isstressed by, for example, being bent; therefore, damages and breakagesof the thin film transistors 100 a and 100 b can be reduced. Inparticular, by providing each of the protective films 204 so as tooverlap with an entire surface of the semiconductor film 106, it becomespossible to efficiently reduce damages on the semiconductor film 106 inthe manufacturing process of the semiconductor device or utilizationafter completion thereof and thereby improve the yield and reliabilityof the semiconductor device.

The protective film 204 is formed using an element selected from silicon(Si), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo),aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), and the like,or an alloy material or a compound material containing any of the aboveelements as its main component. In addition, the protective film 204 mayhave a single-layer structure or a stacked-layer structure of two ormore layers.

Note that FIGS. 16A and 16B show an example in which one of theprotective films 204 having island shapes is provided under one of thesemiconductor films 106 having island shapes; however, the presentinvention is not limited to this. Alternatively, one of the protectivefilms 204 having island shapes may be provided so as to overlap with theplurality of semiconductor films 106 having island shapes. In the caseof providing one of the protective films 204 having island shapes so asto overlap with the plurality of semiconductor films 106 having islandshapes, steps at end portions of the protective films 204 can bereduced; therefore, breaking of the semiconductor films 106 due tomisalignment of a mask or the like can be prevented.

Subsequently, an example of a method for manufacturing the semiconductordevice described above is described with reference to drawings. Notethat, here, the process is described in which after an element such as athin film transistor is formed over a supporting substrate, the elementis released from the supporting substrate to be transferred to anothersubstrate.

The release layer 122 is formed on one surface of the substrate 120, andthen an insulating film 202 to be a base and the protective film areformed. Note that the release layer 122, the insulating film 202, andthe protective film can be formed successively. Subsequently, theprotective film is selectively etched to form the protective films 204having island shapes (see FIG. 17A).

The insulating film 202 to be the base is formed by a layer containingoxide of silicon or nitride of silicon in a single-layer orstacked-layer structure with a layer containing oxide of silicon ornitride of silicon by sputtering, plasma CVD, or the like. In the casewhere the insulating layer to be the base has a two-layer structure, asilicon nitride oxide layer may be formed as a first layer, and asilicon oxynitride layer may be formed as a second layer, for example.In the case where the insulating layer to be a base has a three-layerstructure, a silicon oxide layer, a silicon nitride oxide layer, and asilicon oxynitride layer may be formed as a first-layer insulatinglayer, a second-layer insulating layer, and a third-layer insulatinglayer respectively. Alternatively, a silicon oxynitride layer, a siliconnitride oxide layer, and a silicon oxynitride layer may be formed as afirst-layer insulating layer, a second-layer insulating layer, and athird-layer insulating layer respectively.

The protective film is formed using an element selected from silicon(Si), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo),aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), and the like,or an alloy material or a compound material containing any of the aboveelements as its main component. In addition, the protective film 204 mayhave a single-layer structure or a stacked-layer structure of two ormore layers. Here, an amorphous semiconductor film (for example, a filmcontaining amorphous silicon) is formed over the insulating film 202 andthen selectively removed to form the protective films 204 having islandshapes.

After the insulating film 104 is formed so as to cover the protectivefilms 204, the semiconductor films 106 having island shapes are formed(see FIG. 17B). The insulating film 104 and the semiconductor films 106may be formed using the materials and the manufacturing methodsdescribed in any of the above embodiment modes. In addition, thesemiconductor films 106 having island shapes are provided so as tooverlap with the protective films 204.

After the gate insulating film 108 is formed so as to cover thesemiconductor films 106, the conductive film 124 and the conductive film126 are sequentially stacked (see FIG. 17C). The gate insulating film108, the conductive film 124, and the conductive film 126 may be formedusing the materials and the manufacturing methods described in any ofthe above embodiment modes.

Next, a resist mask is formed by a photolithography method, and theconductive film 124 and the conductive film 126 are selectively etchedto form the first conductive films 110. Then, an impurity element isintroduced into the semiconductor films 106 by using the firstconductive films 110 as masks, so that the impurity regions 106 b andthe channel formation regions 106 a are formed (see FIG. 17D). As theimpurity element, an n-type impurity element or a p-type impurityelement is used. As an n-type impurity element, phosphorus (P), arsenic(As), or the like can be used. As a p-type impurity element, boron (B),aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus(P) is used for the impurity element and an n-channel thin filmtransistor is formed. Note that the impurity regions 106 b function assource and drain regions in the thin film transistor.

After the insulating film 116 is formed so as to cover the firstconductive films 110 and the gate insulating film 108, openings whichreach the impurity regions 106 b of the semiconductor films 106 areformed, and then the third conducive films 118 are selectively formed soas to fill the openings (see FIG. 17E). The third conducive films 118function as source and drain electrodes in the thin film transistor.

Next, the insulating film 134 is provided so as to cover the thirdconductive films, and a first sheet material 136 is attached to asurface of the insulating film 134 (see FIG. 18A).

Next, an element formation layer 142 including the thin film transistors100 a and 100 b and the like is released from the substrate 120 (seeFIG. 18B). Here, the element formation layer 142 is released from thesubstrate 120 by using physical force.

Next, the second sheet material 138 is provided on the other surface(the surface released from the substrate 120) of the element formationlayer 142, and then one or both of heat treatment and pressure treatmentare performed to attach the second sheet material 138 to the elementformation layer 142 (see FIG. 18C). As the first sheet material 136 andthe second sheet material 138, a hot-melt film, a plastic substrate overwhich an adhesive layer is formed, or the like can be used.

Through the above process, a semiconductor device can be manufactured.Note that, in FIGS. 17A to 18C, the process is described in which aftera thin film transistor is formed over a supporting substrate, theelement is released from the supporting substrate to be transferred toanother substrate; however, the manufacturing method is not limited tothis. For example, the thin film transistors 100 a and 100 b may bedirectly provided over the substrate 102 as described in Embodiment mode4.

Note that FIG. 16A and 16B show an example in which each of theprotective films 204 is provided so as to overlap with an entire surfaceof the semiconductor film 106; however, the semiconductor device of thisembodiment mode is not limited to this structure. The protective films204 and the semiconductor film 106 may at least partially overlap witheach other. An example of such a semiconductor device is described withreference to FIGS. 19A and 19B. Note that FIG. 19A shows a top plan viewand FIG. 19B shows a cross-sectional view taken along a line A-B in FIG.19A.

In the semiconductor device shown in FIGS. 19A and 19B, the protectivefilms 204 having island shapes are provided so as to partially overlapwith the semiconductor films 106 having island shapes, which areincluded in the thin film transistors 100 a and 100 b, with theinsulating film 104 interposed therebetween. In the case of thusproviding the protective films 204, each of the protective films 204 arepreferably provided so as to overlap with an entire surface of thechannel formation region 106 a of the semiconductor film 106 and part ofthe impurity region 106 b. This is because the conductive films 110functioning as gate electrodes cross over the semiconductor films 106and thereby generating steps at the end portions of the channelformation regions 106 a, and if the protective films 204 are provided soas to overlap with only part of the channel formation regions 106 a, theconductive films 110 and the semiconductor films 106 might beshort-circuited.

In the case where the protective films 204 are provided so as to overlapwith part of the semiconductor films 106, it is preferable to providethe protective films 204 and the third conductive films 118 so as tooverlap with each other. FIGS. 19A and 19B show an example in which endportions of the protective films 204 overlap with end portions of thethird conductive films 118 in regions 210. By providing of theprotective films 204 so as to overlap with the third conductive films118, the stress is concentrated in the region 111 (between the thin filmtransistors 100 a and 100 b) where an element such as a transistor isnot formed (the semiconductor device is bent in the region 111) even inthe case where the semiconductor device is stressed by, for example,being bent; therefore, damages and breakages of the thin filmtransistors 100 a and 100 b can be reduced. That is, by providing theprotective films 204 and the third conductive films 118 so as to overlapwith the semiconductor films 106, the semiconductor device can beprevented from being bent in portions where the semiconductor films 106are formed.

Note that the structure of a semiconductor device, which is described inthis embodiment mode, can be combined with that described in any of theother embodiment modes. For example, the structure shown in FIGS. 16Aand 16B or FIGS. 19A and 19B in which the second conductive filmfunctioning as a protective film, which is described in any of the aboveembodiment modes, is additionally provided can be employed. An exampleof such a semiconductor device is shown in FIGS. 20A to 21B. Note thatFIG. 20A shows a top plan view and FIG. 20B shows a cross-sectional viewtaken along a line A-B in FIG. 20A.

The semiconductor device shown in FIGS. 20A and 20B is provided to havethe structure of FIGS. 1A and 1B described in Embodiment Mode 1 and thestructure of FIGS. 16A and 16B described in this embodiment mode incombination. At least part of the semiconductor films 106 is sandwichedbetween the protective films 204 and the second conductive films 114.Thus, by providing the semiconductor films 106 so as to overlap with theprotective films 204 and the second conductive films 114, even in thecase where the semiconductor device is stressed by, for example, beingbent, the semiconductor device is prevented from being bent in portionsof the semiconductor films 106 and thereby damages and breakages of thethin film transistors 100 a and 100 b can be reduced.

Further, the semiconductor device shown in FIG. 21A is provided to havethe structure of FIG. 3A described in Embodiment Mode 1 and thestructure of FIGS. 16A and 16B described in this embodiment mode incombination. The semiconductor device shown in FIG. 21B is provided tohave the structure of FIG. 15E described in Embodiment Mode 5 and thestructure of FIGS. 16A and 16B described in this embodiment mode incombination.

Thus, by combining the structure of a semiconductor device, which isdescribed in this embodiment mode and that described in any of the aboveembodiment modes, it is possible to efficiently reduce damages of thesemiconductor films 106 (and further the thin film transistors 100 a and100 b) even in the case where the semiconductor films 106 are stressedby, for example, being bent in the manufacturing process of thesemiconductor device or utilization after completion thereof, andthereby improve the yield and reliability of the semiconductor device.Note that the structure described in this embodiment mode can be freelycombined with that described in any of the above embodiment modes, likethe structure of FIGS. 20A and 20B and the structure of FIGS. 21A and21B.

Embodiment Mode 7

In this embodiment mode, a semiconductor device which is different fromthat in any of the above embodiment modes is described with reference todrawings. Specifically, a semiconductor device is described in which alayer to be a protective film of a thin film transistor is provided soas not to overlap with a semiconductor film of the thin film transistor.

An example of the semiconductor device described in this embodiment modeis described with reference to FIGS. 22A and 22B. Note that FIG. 22Ashows a top plan view and FIG. 22B shows a cross-sectional view takenalong a line A-B in FIG. 22A.

In the semiconductor device shown in FIGS. 22A and 22B, the protectivefilms 204 over the substrate 102 are provided so as to surround the thinfilm transistors 100 a and 100 b. Specifically, the protective films 204are provided so as to surround the semiconductor films 106 included inthe thin film transistors 100 a and 100 b and the protective films 204are provided below the semiconductor films 106 so as not to overlap withthe semiconductor films 106 in a direction perpendicular to a surface ofthe substrate 102. In the case of providing the semiconductor films 106and the protective films 204 so as not to overlap with each other, lesssteps are generated in the semiconductor films 106 as compared to thecase of providing them so as to overlap with each other; therefore,breaking of the semiconductor films 106 can be suppressed.

Thus, by providing the protective films 204 so as to surround thesemiconductor films 106, the stress is concentrated in the region 111(between the thin film transistors 100 a and 100 b) where an elementsuch as a transistor is not formed (the semiconductor device is bent inthe region 111) even in the case where the semiconductor device isstressed by, for example, being bent; therefore, damages and breakagesof the thin film transistors 100 a and 100 b can be reduced. Further, byproviding the protective films 204 and the third conductive films 118 soas to overlap with each other, the semiconductor films 106 can beprotected from above and below. Therefore, it becomes possible toefficiently reduce damages and breakages of the semiconductor films 106and thereby improve the yield and reliability of the semiconductordevice.

Note that the structure of a semiconductor device, which is described inthis embodiment mode, can be combined with that described in any of theabove embodiment modes.

For example, the structure shown in FIGS. 22A and 22B in which thesecond conductive film functioning a protective film, which is describedin any of the above embodiment modes, is additionally provided can beemployed. An example thereof is shown in FIGS. 23A and 23B.

The semiconductor device shown in FIG. 23A is provided to have thestructure of FIG. 2A described in Embodiment Mode 1 and the structure ofFIGS. 22A and 22B described in this embodiment mode in combination. Notethat, here, an example is shown in which the second conductive films 114and the protective films 204 are provided so as to overlap with eachother. By providing the protective films 204 provided around thesemiconductor films 106 so as to overlap with the second conductivefilms 114, the semiconductor device is prevented from being bent inportions of the semiconductor films 106 even in the case where thesemiconductor device is stressed by, for example, being bent; therefore,damages and breakages of the thin film transistors 100 a and 100 b canbe reduced.

The semiconductor device shown in FIG. 23B is provided to have thestructure of FIG. 3A described in Embodiment Mode 1 and the structure ofFIGS. 22A and 22B described in this embodiment mode in combination. Notethat, here, an example is shown in which the second conductive films 114and the protective films 204 are provided so as to overlap with eachother. By providing the protective films 204 provided around thesemiconductor films 106 so as to overlap with the second conductivefilms 114, the semiconductor device is prevented from being bent inportions of the semiconductor films 106 even in the case where thesemiconductor device is stressed by, for example, being bent; therefore,damages and breakages of the thin film transistors 100 a and 100 b canbe reduced.

Thus, by combining the structure of a semiconductor device, which isdescribed in this embodiment mode and that described in any of the aboveembodiment modes, it is possible to efficiently reduce damages of thesemiconductor films 106 (and further the thin film transistors 100 a and100 b) even in the case where the semiconductor films 106 are stressedby, for example, being bent in the manufacturing process of thesemiconductor device or utilization after completion thereof, andthereby improve the yield and reliability of the semiconductor device.Note that the structure of FIGS. 23A and 23B is just an example, and thestructure described in this embodiment mode can be freely combined withthat described in any of the above embodiment modes.

Embodiment Mode 8

In this embodiment mode, a semiconductor device which is different fromthat in any of the above embodiment modes is described with reference todrawings. Specifically, a semiconductor device is described in which alayer to be a protective film of a thin film transistor is provided overthe thin film transistor.

An example of the semiconductor device described in this embodiment modeis described with reference to drawings.

First, the case of providing protective films over the thin filmtransistors 100 a and 100 b is described with reference to FIGS. 24A to24C. Note that FIG. 24A shows a top plan view and FIGS. 24B and 24C eachshow a cross-sectional view taken along a line A-B in FIG. 24A.

In the semiconductor device shown in FIGS. 24A to 24C, the protectivefilms 204 are provided over the thin film transistors 100 a and 100 bwith an insulating film (here, the insulating film 134) interposedtherebetween. The protective films 204 having island shapes are providedso as to overlap with the semiconductor films 106 having island shapes,which are included in the thin film transistors 100 a and 100 b, with aninsulating film or the like interposed therebetween. Further, theprotective films 204 are each provided so as to have a larger area thanthe semiconductor film 106.

Thus, by providing the protective films 204 so as to overlap with thethin film transistor, even in the case where the semiconductor device isstressed by, for example, being bent, the stress is concentrated in aregion 111 (between the thin film transistors 100 a and 100 b) where anelement such as a transistor is not formed (the semiconductor device isbent in the region 111) and thereby damages and breakages of the thinfilm transistors 100 a and 100 b can be reduced. In particular, byproviding each of the protective films 204 so as to overlap with anentire surface of the semiconductor film 106, it becomes possible toefficiently reduce damages of the semiconductor film 106 in themanufacturing process of the semiconductor device or utilization aftercompletion thereof and thereby improve the yield and reliability of thesemiconductor device. It is needless to say that each of the protectivefilms 204 do not necessarily overlap with an entire surface of thesemiconductor film 106 and each of the protective films 204 may beprovided so as to overlap with at least part of the semiconductor film106.

Alternatively, a structure may be employed in which the secondconductive films 114 described in any of the above embodiment modes areprovided as well as the protective films 204. For example, as shown inFIG. 24C, the structure of FIGS. 1A and 1B described in Embodiment Mode1, in which the protective films 204 are additionally provided, may beemployed. Thus, by providing the second conductive films 114 and theprotective films 204, even in the case where the semiconductor device isstressed, damages and breakages of the thin film transistors 100 a and100 b can be efficiently reduced.

Next, the case of providing the protective films 204 so as to surroundthe thin film transistors 100 a and 100 b is described with reference toFIGS. 25A and 25B. Note that FIG. 25A shows a top plan view and FIG. 25Bshows a cross-sectional view taken along a line A-B in FIG. 25A.

In the semiconductor device shown in FIGS. 25A and 25B, the protectivefilms 204 are provided over an insulating film (here, the insulatingfilm 134) provided over the thin film transistors 100 a and 100 b so asto surround the semiconductor films 106 having island shapes, which areincluded in the thin film transistors 100 a and 100 b. In addition, theprotective films 204 are provided over the insulating film formed abovethe semiconductor films 106 so as not to overlap with the semiconductorfilms 106 in a direction perpendicular to a surface of the substrate102.

Further, FIGS. 25A and 25B show the case of providing the secondconductive films 114 so as to cover end portions of the semiconductorfilms 106. By providing the second conductive films 114 so as to overlapwith the protective films 204, even in the case where the semiconductordevice is stressed by, for example, being bent, the semiconductor films106 are sufficiently prevented from being damaged by being bent. Notethat a structure may be employed in which the second conductive films114 are not provided and the protective films 204 are provided.

Thus, by providing the protective films 204 above the thin filmtransistors, even in the case where the semiconductor device isstressed, damages and breakages of the thin film transistors 100 a and100 b can be efficiently reduced. In addition, in the case of providingthe protective films above the thin film transistors, the thin filmtransistors are prevented from being adversely affected by steps(unevenness) due to the protective films, in the manufacturing processof a semiconductor device.

Note that the structure of a semiconductor device, which is described inthis embodiment mode, can be combined with that described in any of theother embodiment modes.

Embodiment Mode 9

In this embodiment mode, an example of an application mode of asemiconductor device described in the above embodiment mode isdescribed. Specifically, applications of a semiconductor device whichcan input and output data without contact is described with reference todrawings. The semiconductor device which can input and output datawithout contact is also referred to as an RFID tag, an ID tag, an ICtag, an IC chip, an RF tag, a wireless tag, an electronic tag, or awireless chip depending on an application mode.

A semiconductor device 80 has a function of communicating data withoutcontact, and includes a high frequency circuit 81, a power sourcecircuit 82, a reset circuit 83, a clock generation circuit 84, a datademodulation circuit 85, a data modulation circuit 86, a control circuit87 for controlling other circuits, a storage circuit 88, and an antenna89 (FIG. 26A). The high frequency circuit 81 is a circuit which receivesa signal from the antenna 89 and outputs a signal received by the datamodulation circuit 86 from the antenna 89. The power source circuit 82is a circuit which generates a power source potential from the receivedsignal. The reset circuit 83 is a circuit which generates a resetsignal. The clock generation circuit 84 is a circuit which generatesvarious clock signals based on the received signal inputted from theantenna 89. The data demodulation circuit 85 is a circuit whichdemodulates the received signal and outputs the signal to the controlcircuit 87. The data modulation circuit 86 is a circuit which modulatesa signal received from the control circuit 87. As the control circuit87, a code extraction circuit 91, a code determination circuit 92, a CRCdetermination circuit 93, and an output unit circuit 94 are formed, forexample. It is to be noted that the code extraction circuit 91 is acircuit which separately extracts a plurality of codes included in aninstruction transmitted to the control circuit 87. The codedetermination circuit 92 is a circuit which compares the extracted codeand a code corresponding to a reference to determine the content of theinstruction. The CRC circuit is a circuit which detects the presence orabsence of a transmission error or the like based on the determinedcode.

Next, an example of operation of the above semiconductor device isexplained. First, a radio signal is received by the antenna 89. Theradio signal is transmitted to the power source circuit 82 via the highfrequency circuit 81, and a high power source potential (hereinafterreferred to as VDD) is generated. The VDD is supplied to each circuitincluded in the semiconductor device 80. In addition, a signaltransmitted to the data demodulation circuit 85 via the high frequencycircuit 81 is demodulated (hereinafter, a demodulated signal).Furthermore, the demodulated signal and a signal transmitted through thereset circuit 83 and the clock generation circuit 84 via the highfrequency circuit 81 are transmitted to the control circuit 87. Thesignal transmitted to the control circuit 87 is analyzed by the codeextraction circuit 91, the code determination circuit 92, the CRCdetermination circuit 93, and the like. Then, in accordance with theanalyzed signal, information of the semiconductor device, which isstored in the storage circuit 88, is outputted. The outputtedinformation of the semiconductor device is encoded through the outputunit circuit 94. Furthermore, the encoded information of thesemiconductor device 80 is transmitted by the antenna 89 as a radiosignal through the data modulation circuit 86. It is to be noted that alow power source potential (hereinafter, VSS) is common among aplurality of circuits included in the semiconductor device 80, and VSScan be GND.

Thus, data of the semiconductor device can be read by transmitting asignal from a reader/writer to the semiconductor device 80 and receivingthe signal transmitted from the semiconductor device 80 by thereader/writer.

In addition, the semiconductor device 80 may supply a power sourcevoltage to each circuit by an electromagnetic wave without a powersource (battery) mounted, or by an electromagnetic wave and a powersource (battery) with the power source (battery) mounted.

Even when the obtained semiconductor device is bent, damages of thesemiconductor device can be prevented and therefore reliability thereofcan be improved by applying the structure described in any of the aboveembodiment modes to the high frequency circuit 81, the power sourcecircuit 82, the reset circuit 83, the clock generation circuit 84, thedata demodulation circuit 85, the data modulation circuit 86, and thecontrol circuit 87 for controlling other circuits.

Next, an example of an application of a semiconductor device which caninput and output data without contact is explained. A side face of aportable terminal including a display portion 3210 is provided with areader/writer 3200, and a side face of an article 3220 is provided witha semiconductor device 3230 (FIG. 26B). When the reader/writer 3200 isheld over the semiconductor device 3230 included in the article 3220,information on the article 3220, such as a raw material, the place oforigin, an inspection result in each production process, the history ofdistribution, or an explanation of the article, is displayed on thedisplay portion 3210. Furthermore, when a product 3260 is transported bya conveyor belt, the product 3260 can be inspected using a reader/writer3240 and a semiconductor device 3250 attached to the product 3260 (FIG.26C). Thus, by utilizing the semiconductor device for a system,information can be acquired easily, and improvement in functionality andadded value of the system can be achieved. As described in the aboveembodiment mode, a transistor or the like included in a semiconductordevice can be prevented from being damaged even when the semiconductordevice is attached to an object having a curved surface, and a highlyreliable semiconductor device can be provided. It is to be noted thatthe pressure bonding apparatus or the pressure bonding method describedin the above embodiment mode may be used when the semiconductor deviceis attached to a product. By using the above pressure bonding apparatusor pressure bonding method, excessive pressure is prevented from beingapplied to the semiconductor device when the semiconductor device isattached to the product, and damage to the semiconductor device can beprevented.

In addition, as a signal transmission method in the above semiconductordevice which can input and output data without contact, anelectromagnetic coupling method, an electromagnetic induction method, amicrowave method, or the like can be used. The transmission method maybe appropriately selected by a practitioner in consideration of anintended use, and an optimum antenna may be provided in accordance withthe transmission method.

In the case of employing, for example, an electromagnetic couplingmethod or an electromagnetic induction method (for example, a 13.56 MHzband) as the signal transmission method in the semiconductor device,electromagnetic induction caused by a change in magnetic field densityis used. Therefore, the conductive film functioning as an antenna isformed into an annular shape (for example, a loop antenna) or a spiralshape (for example, a spiral antenna).

In the case of employing, for example, a microwave method (for example,a UHF band (860 to 960 MHz band), a 2.45 GHz band, or the like) as thesignal transmission method in the semiconductor device, the shape suchas a length of the conductive film functioning as an antenna may beappropriately set in consideration of a wavelength of an electromagneticwave used for signal transmission. For example, the conductive filmfunctioning as an antenna can be formed into a linear shape (forexample, a dipole antenna), a flat shape (for example, a patch antenna),a ribbon-like shape, or the like. The shape of the conductive filmfunctioning as an antenna is not limited to a linear shape, and theconductive film functioning as an antenna may be formed in a curved-lineshape, a meander shape, or a combination thereof, in consideration of awavelength of an electromagnetic wave. Whichever shape the conductivefilm functioning as an antenna is formed into, a damage to the elementgroup, or the like can be prevented by controlling the pressure appliedto the element group when the element group is attached to the substratewhile monitoring the pressure applied to the element group so thatexcessive pressure is prevented from being applied as described in theabove embodiment mode.

The conductive film functioning as an antenna is formed using aconductive material by a CVD method, a sputtering method, a printingmethod such as screen printing or gravure printing, a dropletdischarging method, a dispenser method, a plating method, or the like.The conductive film is formed to have a single-layer structure or astacked-layer structure of an element selected from aluminum (Al),titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt),nickel (Ni), palladium (Pd), tantalum (Ta), and molybdenum (Mo) or analloy material or a compound material containing the element as its maincomponent.

In the case of forming a conductive film functioning as an antenna byusing, for example, a screen printing method, the conductive film can beformed by selectively printing a conductive paste in which conductiveparticles each having a grain size of several nm to several tens of μmare dissolved or dispersed in an organic resin. As the conductiveparticle, a fine particle or a dispersive nanoparticle of one or moremetals of silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum(Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), and titanium (Ti)or silver halide can be used. In addition, as the organic resincontained in the conductive paste, one or a plurality of organic resinseach functioning as a binder, a solvent, a dispersant, or a coating ofthe metal particle can be used. Typically, an organic resin such as anepoxy resin or a silicone resin can be used. When forming a conductivefilm, baking is preferably performed after the conductive paste isapplied. For example, in the case of using fine particles (of whichgrain size is 1 nm to 100 nm inclusive) containing silver as its maincomponent as a material of the conductive paste, a conductive film canbe obtained by hardening the conductive paste by baking at a temperatureof 150 to 300° C. Alternatively, fine particles containing solder orlead-free solder as its main component may be used; in this case, it ispreferable to use a fine particle having a grain size of 20 μm or less.Solder or lead-free solder has an advantage such as low cost.

Besides the above-mentioned materials, ceramic, ferrite, or the like maybe applied to an antenna. Furthermore, a material of which dielectricconstant and magnetic permeability are negative in a microwave band(metamaterial) can be applied to an antenna.

In the case of applying an electromagnetic coupling method or anelectromagnetic induction method, and placing a semiconductor deviceincluding an antenna in contact with a metal, a magnetic material havingmagnetic permeability is preferably interposed between the semiconductordevice and the metal. In the case of placing a semiconductor deviceincluding an antenna in contact with a metal, an eddy current flows inthe metal accompanying a change in a magnetic field, and a demagnetizingfield generated by the eddy current impairs a change in a magnetic fieldand decreases a communication range. Therefore, an eddy current of themetal and a decrease in the communication range can be suppressed byinterposing a material having magnetic permeability between thesemiconductor device and the metal. It is to be noted that ferrite or ametal thin film having high magnetic permeability and little loss ofhigh frequency wave can be used as the magnetic material.

It is to be noted that an applicable range of the flexible semiconductordevice is wide in addition to the above, and the flexible semiconductordevice can be applied to any product as long as it clarifies informationsuch as the history of an object without contact and is useful forproduction, management, or the like. For example, the semiconductordevice can be mounted on bills, coins, securities, certificates, bearerbonds, packing containers, books, recording media, personal belongings,vehicles, food, clothing, health products, commodities, medicine,electronic devices, and the like. Examples of them is explained withreference to FIGS. 27A to 27H.

The bills and coins are money distributed to the market, and include onevalid in a certain area (cash voucher), memorial coins, and the like.The securities refer to checks, certificates, promissory notes, and thelike (FIG. 27A). The certificates refer to driver's licenses,certificates of residence, and the like (FIG. 27B). The bearer bondsrefer to stamps, rice coupons, various gift certificates, and the like(FIG. 27C). The packing containers refer to wrapping paper for foodcontainers and the like, plastic bottles, and the like (FIG. 27D). Thebooks refer to hardbacks, paperbacks, and the like (FIG. 27E). Therecording media refer to DVD software, video tapes, and the like (FIG.27F). The vehicles refer to wheeled vehicles such as bicycles, ships,and the like (FIG. 27G). The personal belongings refer to bags, glasses,and the like (FIG. 27H). The food refers to food articles, drink, andthe like. The clothing refers to clothes, footwear, and the like. Thehealth products refer to medical instruments, health instruments, andthe like. The commodities refer to furniture, lighting equipment, andthe like. The medicine refers to medical products, pesticides, and thelike. The electronic devices refer to liquid crystal display devices, ELdisplay devices, television devices (TV sets and flat-screen TV sets),cellular phones, and the like.

Forgery can be prevented by mounting the semiconductor device 20 on thebills, the coins, the securities, the certificates, the bearer bonds, orthe like. The efficiency of an inspection system, a system used in arental shop, or the like can be improved by mounting the semiconductordevice 20 on the packing containers, the books, the recording media, thepersonal belongings, the food, the commodities, the electronic devices,or the like. Forgery or theft can be prevented by mounting thesemiconductor device 20 on the vehicles, the health products, themedicine, or the like; further, in a case of the medicine, medicine canbe prevented from being taken mistakenly. The semiconductor device 20can be mounted on the foregoing article by being attached to the surfaceor being embedded therein. For example, in a case of a book, thesemiconductor device 20 may be embedded in a piece of paper; in the caseof a package made from an organic resin, the semiconductor device 20 maybe embedded in the organic resin. By using a flexible semiconductordevice having the structure described in the above embodiment modes,breakage or the like of an element included in the semiconductor devicecan be prevented even when the semiconductor device is mounted on paperor the like.

As described above, the efficiency of an inspection system, a systemused in a rental shop, or the like can be improved by mounting thesemiconductor device on the packing containers, the recording media, thepersonal belonging, the food, the clothing, the commodities, theelectronic devices, or the like. In addition, by mounting thesemiconductor device on the vehicles, forgery or theft can be prevented.Further, by implanting the semiconductor device in a creature such as ananimal, an individual creature can be easily identified. For example, byimplanting the semiconductor device with a sensor in a creature such aslivestock, its health condition such as a current body temperature aswell as its birth year, sex, breed, or the like can be easily managed.

Note that this embodiment mode can be freely combined with any of theabove embodiment modes. That is, the structures of the semiconductordevice, which are described in the aforementioned embodiment modes, canbe applied to the semiconductor device described in this embodimentmode.

Embodiment Mode 10

In this embodiment mode, an example of the case where the semiconductordevice described in Embodiment Modes 1 to 8 is applied to a displaydevice is described with reference to drawings.

FIG. 28A shows a display that includes a main body 4101, a supportingbase 4102, and a display portion 4103. The display portion 4103 isformed using a flexible substrate to achieve a lightweight and thindisplay. The display portion 4103 can be curved and detached from thesupporting base 4102 so that the display is hung on a curved wall. Whenthe semiconductor device having the structure described in any ofEmbodiment Modes 1 to 8 is used for the display portion 4103, a circuitfor driving the display portion 4103, and the like, a flexible andhighly reliable display can be manufactured.

FIG. 28B shows a display that can be wound, which includes a main body4201, a display portion 4202, and the like. The main body 4201 and thedisplay portion 4202 are formed using a flexible substrate to carry thedisplay in a bent or wound state. When the semiconductor device havingthe structure described in any of Embodiment Modes 1 to 8 is used forthe display portion 4202, a circuit for driving the display portion4202, and the like, a flexible and highly reliable display can bemanufactured.

FIG. 28C shows a sheet computer that includes a main body 4401, adisplay portion 4402, a keyboard 4403, a touch pad 4404, an externalconnecting port 4405, a power source plug 4406, and the like. Thedisplay portion 4402 is formed using a flexible substrate to achieve alightweight and thin computer. In addition, the display portion 4402 canbe wound and stored in the main body if a portion of the power sourceplug 4406 is provided with a storage space. When the semiconductordevice having the structure described in any of Embodiment Modes 1 to 8is used for the display portion 4402, a circuit for driving the displayportion 4402, and the like, a flexible and highly reliable thin computercan be manufactured.

FIG. 28D shows a display device having a large display portion with asize of 20 to 80 inches, which includes a main body 4300, a keyboard4301 that is an operating portion, a display portion 4302, a speaker4303, and the like. The display portion 4302 is formed using a flexiblesubstrate, and the main body 4300 can be carried in a bent or woundstate with the keyboard 4301 detached. When the semiconductor devicehaving the structure described in any of Embodiment Modes 1 to 8 is usedfor the display portion 4302, a circuit for driving the display portion4302, and the like, a flexible and highly reliable large-sized displaydevice can be manufactured.

FIG. 28E shows an electronic book that includes a main body 4501, adisplay portion 4502, an operating key 4503, and the like. A modem maybe incorporated in the main body 4501. The display portion 4502 isformed using a flexible substrate to be bent. Further, the displayportion 4502 can display a moving image as well as a still image such asa character. When the semiconductor device having the structuredescribed in any of Embodiment Modes 1 to 8 is used for the displayportion 4502, a circuit for driving the display portion 4502, and thelike, a flexible and highly reliable electronic book can bemanufactured.

FIG. 28F shows an IC card that includes a main body 4601, a displayportion 4602, a connecting terminal 4603, and the like. Since thedisplay portion 4602 is formed using a flexible substrate to be alightweight and thin sheet type, it can be attached onto a card surface.When the IC card can receive data without contact, information obtainedfrom outside can be displayed on the display portion 4602. When thesemiconductor device having the structure described in any of EmbodimentModes 1 to 8 is used for the display portion 4602, a circuit for drivingthe display portion 4602, and the like, a flexible and highly reliableIC card can be manufactured.

As described above, the applicable range of the invention is so widethat the invention can be applied to electronic devices and informationdisplaying means of various fields.

This application is based on Japanese Patent Application serial no.2006-256902 filed in Japan Patent Office on 22 Sep. 2006, the entirecontents of which are hereby incorporated by reference.

1. A semiconductor device comprising: a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a first interlayer insulating film provided to cover the first conductive film; a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region; a second interlayer insulating film provided over the second conductive film; and a third conductive film provided over the second interlayer insulating film, wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film and the second interlayer insulating film.
 2. The semiconductor device according to claim 1, wherein the second conductive film covers at least an end portion of the impurity region with the first interlayer insulating film interposed therebetween.
 3. A semiconductor device comprising: a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a first interlayer insulating film provided to cover the first conductive film; a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region; a second interlayer insulating film provided over the second conductive film; and a third conductive film provided over the second interlayer insulating film, wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film, the second interlayer insulating film, and the second conductive film.
 4. The semiconductor device according to claim 3, wherein the second conductive film covers at least an end portion of the impurity region with the first interlayer insulating film interposed therebetween.
 5. A semiconductor device comprising: a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a first interlayer insulating film provided to cover the first conductive film; a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region; a second interlayer insulating film provided over the second conductive film; and a third conductive film provided over the second interlayer insulating film, wherein the second conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film; and the third conductive film is electrically connected to the second conductive film through an opening formed in the second interlayer insulating film.
 6. The semiconductor device according to claim 5, wherein the second conductive film covers at least an end portion of the impurity region with the first interlayer insulating film interposed therebetween.
 7. A semiconductor device comprising: a semiconductor film including a channel formation region, a first impurity region, and a second impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a second conductive film provided over the first impurity region to be in contact with the gate insulating film; an interlayer insulating film provided to cover the first conductive film and the second conductive film; and a third conductive film provided over the interlayer insulating film, wherein the first conductive film and the second conductive film are formed of the same material, and wherein the third conductive film is electrically connected to the first impurity region through an opening formed in the interlayer insulating film.
 8. A semiconductor device comprising: a semiconductor film including a channel formation region, a first impurity region, and a second impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a second conductive film provided over the first impurity region to be in contact with the gate insulating film; an interlayer insulating film provided to cover the first conductive film and the second conductive film; and a third conductive film provided over the interlayer insulating film, wherein the first conductive film and the second conductive film are formed of the same material; and wherein the third conductive film is electrically connected to the first impurity region through an opening formed in the interlayer insulating film and the second conductive film.
 9. A semiconductor device comprising: a semiconductor film including a channel formation region, a first impurity region, and a second impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a second conductive film provided to cover an end portion of the first impurity region; an interlayer insulating film provided to cover the first conductive film and the second conductive film; and a third conductive film provided over the interlayer insulating film, wherein the first conductive film and the second conductive film are formed of the same material; and wherein the third conductive film is electrically connected to the second conductive film through an opening formed in the interlayer insulating film.
 10. The semiconductor device according to claim 9, wherein the channel formation region and the second impurity region are in contact with the gate insulating film, and the end portion of the first impurity region is in contact with the second conductive film.
 11. A semiconductor device comprising: an island-shaped protective film provided over a substrate; a semiconductor film including a channel formation region and an impurity region, which is provided over the protective film with an insulating film interposed therebetween; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a first interlayer insulating film provided to cover the first conductive film; a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region; a second interlayer insulating film provided over the second conductive film; and a third conductive film provided over the second interlayer insulating film, wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film, the second interlayer insulating film, and the second conductive film.
 12. A semiconductor device comprising: a protective film provided over a substrate; an insulating film provided over the protective film, a semiconductor film including a channel formation region and an impurity region, which is provided over the insulating film; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; an interlayer insulating film provided to cover the first conductive film; and a second conductive film provided over the interlayer insulating film, wherein the protective film is provided to surround the semiconductor film; and wherein the second conductive film is electrically connected to the impurity region through an opening formed in the interlayer insulating film.
 13. The semiconductor device according to claim 12, wherein the protective film and the semiconductor film do not overlap with each other.
 14. A semiconductor device comprising: a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate; a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween; a first interlayer insulating film provided to cover the first conductive film; a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region; a second interlayer insulating film provided over the second conductive film; a third conductive film provided over the second interlayer insulating film; a third interlayer insulating film provided to cover the third conductive film; and an island-shaped protective film provided over the third interlayer insulating film, wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film, the second interlayer insulating film; and wherein the semiconductor film and the protective film overlap with each other. 